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Volumn 2, Issue 4, 2002, Pages 336-340

Piezoresistive sensors on plastic substrates using doped microcrystalline silicon

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DOPING (ADDITIVES); POLYETHYLENE TEREPHTHALATES; STRAIN;

EID: 0012778385     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2002.804037     Document Type: Article
Times cited : (27)

References (18)
  • 1
    • 33846693940 scopus 로고
    • Piezoresistance effect in germanium and silicon
    • C. S. Smith, "Piezoresistance effect in germanium and silicon," Phys. Rev., vol. 94, p. 42, 1954.
    • (1954) Phys. Rev. , vol.94 , pp. 42
    • Smith, C.S.1
  • 2
    • 34249846476 scopus 로고
    • Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects
    • W. G. Pfann and R. N. Thurston, "Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects," J. Appl. Phys., vol. 32, p. 2008, 1961.
    • (1961) J. Appl. Phys. , vol.32 , pp. 2008
    • Pfann, W.G.1    Thurston, R.N.2
  • 3
    • 0000392980 scopus 로고
    • Silicon diffused-element piezoresistive diaphragms
    • O. N. Tufte, P. W. Chapman, and D. Long, "Silicon diffused-element piezoresistive diaphragms," J. Appl. Phys., vol. 33, p. 3322, 1962.
    • (1962) J. Appl. Phys. , vol.33 , pp. 3322
    • Tufte, O.N.1    Chapman, P.W.2    Long, D.3
  • 4
    • 0034156168 scopus 로고    scopus 로고
    • Stability of low-temperarure amorphous silicon thin film transistors formed on glass and transparent plastic substrates
    • C. S. Yang, L. L. Smith, C. B. Arthur, and G. N. Parsons, "Stability of low-temperarure amorphous silicon thin film transistors formed on glass and transparent plastic substrates," J. Vac. Sci. Technol. B, vol. 18, p. 683, 2000.
    • (2000) J. Vac. Sci. Technol. B , vol.18 , pp. 683
    • Yang, C.S.1    Smith, L.L.2    Arthur, C.B.3    Parsons, G.N.4
  • 5
    • 0000459446 scopus 로고    scopus 로고
    • Amorphous silicon air-gap resonators on large area substrates
    • M. Boucinha, P. Brogueira, V. Chu, and J. P. Conde, "Amorphous silicon air-gap resonators on large area substrates," Appl. Phys. Lett., vol. 77, p. 907, 2000.
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 907
    • Boucinha, M.1    Brogueira, P.2    Chu, V.3    Conde, J.P.4
  • 8
    • 0001038893 scopus 로고    scopus 로고
    • Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
    • M. V. Fischetti and S. E. Laux, "Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys," J. Appl. Phys., vol. 80, p. 2234, 1996.
    • (1996) J. Appl. Phys. , vol.80 , pp. 2234
    • Fischetti, M.V.1    Laux, S.E.2
  • 9
    • 36149003661 scopus 로고
    • Deformation potentials in silicon. III. Effects of a general strain on conduction and valence levels
    • I. Goroff and L. Kleinman, "Deformation Potentials in Silicon. III. Effects of a general strain on conduction and valence levels," Phys. Rev., vol. 132, p. 1080, 1961.
    • (1961) Phys. Rev. , vol.132 , pp. 1080
    • Goroff, I.1    Kleinman, L.2
  • 10
    • 0012827444 scopus 로고    scopus 로고
    • Study on the piezoresistive effect of crystalline and polycrystalline diamond under uniaxial strains
    • L. Fang, W. L. Wang, P. D. Ding, K. J. Liao, and J. Wang, "Study on the piezoresistive effect of crystalline and polycrystalline diamond under uniaxial strains," J. Appl. Phys., vol. 86, p. 5185, 1999.
    • (1999) J. Appl. Phys. , vol.86 , pp. 5185
    • Fang, L.1    Wang, W.L.2    Ding, P.D.3    Liao, K.J.4    Wang, J.5
  • 11
    • 0022496207 scopus 로고
    • Piezoresistive effect of hydrogenated microcrystalline silicon prepared by plasma- And photo-chemical vapor deposition
    • S. Nishida, M. Konagai, and K. Takahashi, "Piezoresistive effect of hydrogenated microcrystalline silicon prepared by plasma- and photo-chemical vapor deposition," Jpn. J. Appl. Phys., vol. 25, p. 17, 1986.
    • (1986) Jpn. J. Appl. Phys. , vol.25 , pp. 17
    • Nishida, S.1    Konagai, M.2    Takahashi, K.3
  • 12
    • 0034428426 scopus 로고    scopus 로고
    • Doping of amorphous and microcrystalline silicon films by hot-wire CVD and RF-PECVD at low substrate temperatures on plastic substrates
    • P. Alpuim, V. Chu, and J. P. Conde, "Doping of amorphous and microcrystalline silicon films by hot-wire CVD and RF-PECVD at low substrate temperatures on plastic substrates," in Proc. Mater. Res. Soc. Symp., vol. 609, 2000, p. A22.6.1.
    • (2000) Proc. Mater. Res. Soc. Symp. , vol.609
    • Alpuim, P.1    Chu, V.2    Conde, J.P.3
  • 13
    • 0035440997 scopus 로고    scopus 로고
    • Doping of amorphous and microcrystalline silicon films deposited at low substrate temperatures by hot-wire chemical vapor deposition
    • _, "Doping of amorphous and microcrystalline silicon films deposited at low substrate temperatures by hot-wire chemical vapor deposition," J. Vac. Sci. Technol. A, vol. 19, p. 2328, 2001.
    • (2001) J. Vac. Sci. Technol. A , vol.19 , pp. 2328
  • 18
    • 0000851347 scopus 로고
    • On the multiple fracture of low-elongation thin films deposited on high-elongation substrates
    • P. H. Wojciechowski and M. S. Mendolia, "On the multiple fracture of low-elongation thin films deposited on high-elongation substrates," J. Vac. Sci. Technol. A, vol. 7, p. 1282, 1989.
    • (1989) J. Vac. Sci. Technol. A , vol.7 , pp. 1282
    • Wojciechowski, P.H.1    Mendolia, M.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.