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Journal of Applied Physics

Volumn 79, Issue 11, 1996, Pages 8384-8390

Interaction of dopants with a host GaAs lattice: The case of low-temperature grown molecular beam epitaxial GaAs(Si)

(4) O'Hagan, S P a Missous, M a Mottram, A a Wright, A C b

a UNIVERSITY OF MANCHESTER (United Kingdom)

b GLYNDWR UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012773069 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.362558 Document Type: Review

Times cited : (6)

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