Characterization of traps in GaAs/W Schottky diodes by optical and electrical deep-level transient spectroscopy methods

Journal of Applied Physics

Volumn 80, Issue 8, 1996, Pages 4389-4394

  Takanashi, Yoshifumi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012654289     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363398     Document Type: Article

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