Erbium-doped silicon epilayers grown by liquid-phase epitaxy

Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 347-351

  Binetti, S ^a   Cavallini, A ^b   Dellafiore, A ^a   Fraboni, B ^b   Grilli, E ^a   Guzzi, M ^a   Pizzini, S ^a   Sanguinetti, S ^a  

^a UNIVERSITY OF MILAN   (Italy)

^b Dipartimento di Fisica   (Italy)

Author keywords

Deep level; Dislocation; Erbium; LPE; Photoluminescence; Silicon

Indexed keywords

EID: 0012551459     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(98)00127-6     Document Type: Article

References (11)

1. S. Binetti, M. Donghi, S. Pizzini, A. Castaldini, A. Cavallini, B. Fraboni, N.A. Sobolev, Solid State Phenomena 57-58 (1997) 213.
2. S. Pizzini, M. Donghi, S. Binetti, G. Wagner, M. Bersani, J. Electrochem. Soc. 145 (1998) 8.
3. A. Polman, J. Appl. Phys. 82 (1) (1997) 1.
4. N.A. Sobolev, O.B. Gusev, E.I. Shek, V.I. Vdovin, T.G. Yugova, A.M. Emel'yanov, Appl. Phys. Lett. (1998), in press.
5. S. Pizzini, M. Donghi, S. Binettti, I. Gelmi, A. Cavallini, B. Fraboni, G. Wagner, Solid State Phenomena 54 (1997) 86.
6. A. Castaldini, A. Cavallini, B. Fraboni, S. Binetti, M. Donghi, S. Pizzini, G. Wagner, Inst. Phys. Conf. Ser. 160 (1997) 297.
7. S. Acerboni, S. Pizzini, S. Binetti, M. Acciarri, B. Pichaud, J. Appl. Phys. 76 (1994) 2703.
8. V.V. Kveder, E.A. Steinman, S.A. Shevchenko, H.G. Grimmeiss, Phys. Rev. B 51 (1995) 520.
9. S. Libertino, S. Coffa, G. Franzò, F. Priolo, J. Appl. Phys. 78 (1995) 3867.
10. E.C. Lightowlers, V. Higgs, Phys. Stat. Sol. A 138 (1993) 665.
11. W. Jantsch, H. Przybylinska, Acta Phys. Pol. A 90 (1996) 623.