Electrical and optical analyses of Er-doped silicon grown by liquid-phase epitaxy

Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 343-346

  Cavallini, A ^a   Fraboni, B ^a   Pizzini, S ^b   Binetti, S ^b   Lazzarini, L ^c   Salviati, G ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF MILAN   (Italy)

^c CNR   (Italy)

Author keywords

Deep level; Dislocation; Erbium; Silicon

Indexed keywords

EID: 0012551281     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(98)00126-4     Document Type: Article

References (14)

1. N.A. Sobolev, Semiconductors 29 (1995) 595.
2. S. Libertino, S. Coffa, G. Franzo', F. Priolo, J. Appl. Phys. 78 (1995) 3876.
3. A. Polman, J. Appl. Phys. 82 (1997) 1.
4. A. Cavallini, B. Fraboni, S. Pizzini, Appl. Phys. Lett. 72 (1998) 1320.
5. T. Sekiguchi, K. Sumino, J. Appl. Phys. 79 (1996) 3253.
6. M. Donghi, S. Binetti, A. Dellafiore, S. Pizzini, private communication.
7. A. Terrasi, G. Franzo', S. Coffa, F. Priolo, F. D'Acapito, S. Mobilio, Appl. Phys. Lett 70 (1997) 1712.
8. V. Higgs, M. Goulding, A. Brinklow, P. Kightley, Appl. Phys. Lett. 60 (1992) 1369.
9. S. Pizzini, M. Donghi, S. Binetti, G. Wagner, M. Bersani, J. Electrochem. Soc. 145 (1998) L8.
10. P. Omling, L. Samuelson, H.G. Grimmeiss, J. Appl. Phys. 54 (1983) 5117.
11. P. Omling, E. Weber, L. Montelius, H. Alexander, J. Michel, Phys. Rev. B 32 (1985) 6571.
12. V.V. Kveder, Yu. Osipyan, W. Schröter, G. Zoth, Phys. Stat. Sol. A 72 (1982) 701.
13. C. Kisielowski, E. Weber, Phys. Rev. B 44 (1991) 1600.
14. L. Kimerling, J. Appl. Phys. 45 (1974) 1839.