Potential-inserted InGaAs-AIGaInAs shallow quantum wells for electro-optical modulation at 1.55 μm

Semiconductor Science and Technology

Volumn 12, Issue 6, 1997, Pages 729-732

  Guettler, T ^a   Krebs, O ^a   Dias, I L ^b   Harmand, J C ^b   Devaux, F ^b   Voisin, P ^a  

^a ECOLE NORMALE SUPÉRIEURE   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012492530     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/6/014     Document Type: Article

References (8)

1. For a recent review see Devaux F et al 1995 Semicond. Sci. Technol. 10 887
2. Zucker J E, Jones K L, Chiu T H, Tell B and Brown-Goebeler K 1992 IEEE J. Lightwave Technol. 10 1926
3. Chelles S, Ferreira R and Voisin P 1995 Semicond. Sci. Technol. 10 105 and references therein
4. Goossen K W, Cunningham J E and Jan WY 1990 Appl. Phys. Lett. 57 2582
5. Feldmann J, Goossen K W, Miller D A B, Fox A M, Cunningham J E and Jan W Y 1991 Appl. Phys. Lett. 59 66
6. Trzeciakovski W and McCombe B D 1989 Appl. Phys. Lett. 55 891
7. Brar B, Samoska L, Kroemer H and English J H 1994 J. Vac. Sci. Technol. B 12 1242
8. Miller D A B, Weiner J S and Chemla D S 1986 IEEE J. Quantum Electron. 22 1816