Crystal-field model of vanadium in 6H silicon carbide

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 19, 1997, Pages 13009-13019

  Kaufmann, B ^a   Dornen A ^a   Ham, F ^b  

^a UNIVERSITY OF STUTTGART   (Germany)

^b LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012406389     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.13009     Document Type: Article

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