Effective circuit design techniques to increase mosfet power amplifier efficiency

Microwave Journal

Volumn 43, Issue 7, 2000, Pages 64-72

  Grebennikov, Andrey V ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012387896     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (5)

1. D.M. Snider, "A Theoretical Analysis and Experimental Confirmation of the Optimally Loaded and Overdriven RF Power Amplifier," IEEE Trans. Electron Devices, Vol. 14, December 1967, pp. 851-857.
2. H.L. Krauss, C.W. Bostian and F.H. Raab, Solid State Radio Engineering, New York: Wiley, 1980.
3. F.H. Raab, "Class-F Power Amplifiers with Maximally Flat Waveforms," IEEE Transactions on Microwave Theory and Techniques, Vol. 45, November 1997, pp. 2007-2012.
4. C. Duvanaud, S. Dietsche, G. Pataut and J. Obregon, "High-efficient Class F GaAs FET Amplifiers Operating with Very Low Bias Voltages for Use in Mobile Telephones at 1.75 GHz," IEEE Microwave and Guided Wave Letters, Vol. 3, August 1993, pp. 268-270.
5. T.B. Mader, E.W. Bryerton, M. Markovic, M. Forman and Z. Popovic, "Switched-mode High-efficiency Microwave Power Amplifiers in a Free-space Power-combiner Array," IEEE Transactions on Microwave Theory and Techniques, Vol. 46, October 1998, pp. 1391-1398.