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Volumn 79, Issue 3, 1996, Pages 1486-1490
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Noise characterization and device parameter extraction of a p-type strained layer quantum-well infrared photodetector
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0012148120
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.360989 Document Type: Article |
Times cited : (12)
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References (21)
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