Excitation efficiency of electrons and holes in forward and reverse biased epitaxially grown Er-doped Si diodes

Applied Physics Letters

Volumn 78, Issue 2, 2001, Pages 210-212

  Markmann, M ^a   Neufeld, E ^a   Sticht, A ^a   Brunner, K ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012003522     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1338955     Document Type: Article

References (12)

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