X-ray study of GaAs/Ge heterostructures: Relationship between interfacial defects and growth process

Nuovo Cimento della Societa Italiana di Fisica D - Condensed Matter, Atomic, Molecular and Chemical Physics, Biophysics

Volumn 19, Issue 2-4, 1997, Pages 213-217

  Putero, M ^a   Burle, N ^a   Pelosi, C ^a   Frigeri, C ^a   Chimenti, E ^a   Guelton, N ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011976729     PISSN: 03926737     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03040975     Document Type: Article

References (6)

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4. DODSON B. W. and TSAO J. Y., Appl. Phys. Lett., 51 (1987) 1325.
5. PEROVIC D. D. and HOUGHTON D. C., Proceedings of the IX Conference MSM, Oxford, 1995, Inst. Phys. Conf. Ser., No. 146 (IOP, Bristol) 1996, pp. 117-134.
6. BURLE N., PICHAUD B., GUELTON N. and SAINT JACQUES R. G., Thin Solid Films, 260 (1995) 65.