Ion-beam annealing of electron traps in n-type Si by post-H+ implantation

Journal of Applied Physics

Volumn 82, Issue 3, 1997, Pages 1053-1057

  Ito, A ^a   Tokuda, Y ^b  

^a SUZUKA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b AICHI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011951311     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365870     Document Type: Article

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