Photoionization related phenomena in doped insulators: The role of inversion site symmetry of impurity centers

Radiation Effects and Defects in Solids

Volumn 155, Issue 1-4, 2001, Pages 1-9

  Kaplyanskii, A A ^a   Basun, S A ^a   Happek, U ^b   Meltzer, R S ^b   Salley, G M ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITY OF GEORGIA   (United States)

Author keywords

CaS:Eu2 +; Hole burning; Li2Ge7O15:Cr3 +; LiNbO3:Cr3 +; Photoionization; Photovoltaic effect

Indexed keywords

EID: 0011933458     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420150108214084     Document Type: Article

References (8)

1. Macfarlane, R. M. and Shelby, R. M. Persistent Spectral Hole-Burning: Science and Applications, Ed. Moerner W. E. (Springer, Berlin 1988) p. 127.
2. Basun, S. A., Danger, T., Kaplyanskii, A. A., McClure, D. S., Petermann K. and Wong, W. C. (1996), Phys. Rev. B. 54, 6141.
3. Kaplyanskii, A. A., Basun, S. A., Happek U. and Meltzer, R. S. (1999). J. Lumin. 83/84, 335.
4. Basun, S. A., Feofilov, S. P., Kaplyanskii, A. A., Happek, U., Choi, J., Jang K. W. and Meltzer, R. S. (2000) Phys. Rev. B, 61, 12848.
5. Glass, A. M., von der Linde, D., Auston D. H. and Negran, T. J. (1975). J. of Electr. Mat. 4, 915.
6. Basun, S. A., Salley, G. M., Gallagher, H. G., Polgar, K., Wells J.-P. R. and Happek, U. Phys. Rev., submitted.
7. Basun, S. A., Raukas, M., Happek, U., Kaplyanskii, A. A., Rennie, J., Vial, J. C., Yen W. M. and Meltzer, R. S. (1997). Phys. Rev. B 56, 12992 .
8. Basun, S. A., Bursian, V. E., Hesse, H., Kapphan, S., Sochava L. S. and Vikhnin, V. S. (1997). Materials Science Forum 239-241, 345.