Photoelectrical properties of 4H-SiC Al ion-doped p+-n junctions

Journal of Wide Bandgap Materials

Volumn 8, Issue 1, 2000, Pages 41-48

  Violina, Galina N ^a   Kalinina, Evgenia V ^b   Kholujanov, Georgy F ^b   Kossov, Vladimir G ^c   Yafaev, Rauf R ^c   Hallén, Anders ^d   Konstantinov, Andrey O ^e   Onushkin, Gregory A ^f  

^a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

^c Electron Optronic   (Russian Federation)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^e ACREO AB   (Sweden)

^f Crystal Growth Research Center   (Russian Federation)

Author keywords

Ion implantation; Photodetector; Silicon carbide; Spectral photosensitivity

Indexed keywords

CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; ION IMPLANTATION; PHOTODETECTORS; PHOTOSENSITIVITY; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

MESA STRUCTURES; PHOTOVOLTAIC REGIMES; QUANTA ENERGY; SCHOTTKY BARRIER STRUCTURES; WIDE BAND SEMICONDUCTORS;

SILICON CARBIDE;

EID: 0011500885     PISSN: 1524511X     EISSN: None     Source Type: Journal    
DOI: 10.1106/RGRB-6MTV-LVF6-JAF7     Document Type: Article

References (7)

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