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Volumn 32, Issue 4, 1998, Pages 242-245

Instruction via web-based semiconductor simulation tools: The case of "fundamentals and design of microelectronics processing"

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0011489204     PISSN: 00092479     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (14)
  • 10
    • 0011452424 scopus 로고
    • Special section on Electronic Materials Processing
    • Special section on Electronic Materials Processing, Chem. Eng. Ed., 24, 26 (1990)
    • (1990) Chem. Eng. Ed. , vol.24 , pp. 26
  • 11
    • 11644279230 scopus 로고
    • NASA, NASA Lewis Research Center
    • For example: (a) Gordon, S., and B.J. McBride, Tech. Rpt. SP-273, NASA, NASA Lewis Research Center (1971); (b) Gaynor, W.H., "Applicability of Thermodynamic Calculations on the Prediction of Chemical Vapor Deposition Reactor Performance and Process-Property Relationships," BS Thesis, School of Chemical Engineering, Purdue University (1989); (c) I.M. Lee, A. Jansons, and C.G. Takoudis, "Effects of Water Vapor and Chlorine on the Epitaxial Growth of SiGe Films by Chemical Vapor Deposition; Thermodynamic Analysis," J. Vac. Sci. Tech., B 15, 880 (1997) and references therein
    • (1971) Tech. Rpt. SP-273
    • Gordon, S.1    McBride, B.J.2
  • 12
    • 0343935113 scopus 로고
    • BS Thesis, School of Chemical Engineering, Purdue University
    • For example: (a) Gordon, S., and B.J. McBride, Tech. Rpt. SP-273, NASA, NASA Lewis Research Center (1971); (b) Gaynor, W.H., "Applicability of Thermodynamic Calculations on the Prediction of Chemical Vapor Deposition Reactor Performance and Process-Property Relationships," BS Thesis, School of Chemical Engineering, Purdue University (1989); (c) I.M. Lee, A. Jansons, and C.G. Takoudis, "Effects of Water Vapor and Chlorine on the Epitaxial Growth of SiGe Films by Chemical Vapor Deposition; Thermodynamic Analysis," J. Vac. Sci. Tech., B 15, 880 (1997) and references therein
    • (1989) Applicability of Thermodynamic Calculations on the Prediction of Chemical Vapor Deposition Reactor Performance and Process-Property Relationships
    • Gaynor, W.H.1
  • 13
    • 0000806244 scopus 로고    scopus 로고
    • Effects of Water Vapor and Chlorine on the Epitaxial Growth of SiGe Films by Chemical Vapor Deposition; Thermodynamic Analysis
    • and references therein
    • For example: (a) Gordon, S., and B.J. McBride, Tech. Rpt. SP-273, NASA, NASA Lewis Research Center (1971); (b) Gaynor, W.H., "Applicability of Thermodynamic Calculations on the Prediction of Chemical Vapor Deposition Reactor Performance and Process-Property Relationships," BS Thesis, School of Chemical Engineering, Purdue University (1989); (c) I.M. Lee, A. Jansons, and C.G. Takoudis, "Effects of Water Vapor and Chlorine on the Epitaxial Growth of SiGe Films by Chemical Vapor Deposition; Thermodynamic Analysis," J. Vac. Sci. Tech., B 15, 880 (1997) and references therein
    • (1997) J. Vac. Sci. Tech., B , vol.15 , pp. 880
    • Lee, I.M.1    Jansons, A.2    Takoudis, C.G.3
  • 14
    • 0011440925 scopus 로고    scopus 로고
    • Technology Modeling Associates, Inc., Sunnyvale, CA, October
    • TSuprem-4: User's Manual, Version 6.4, Technology Modeling Associates, Inc., Sunnyvale, CA, October (1996)
    • (1996) TSuprem-4: User's Manual, Version 6.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.