-
2
-
-
0003675605
-
-
McGraw- Hill, New York, NY
-
Middleman, S., and A.K. Hochberg, Process Engineering Analysis in Semiconductor Device Fabrication, McGraw-Hill, New York, NY (1993)
-
(1993)
Process Engineering Analysis in Semiconductor Device Fabrication
-
-
Middleman, S.1
Hochberg, A.K.2
-
10
-
-
0011452424
-
Special section on Electronic Materials Processing
-
Special section on Electronic Materials Processing, Chem. Eng. Ed., 24, 26 (1990)
-
(1990)
Chem. Eng. Ed.
, vol.24
, pp. 26
-
-
-
11
-
-
11644279230
-
-
NASA, NASA Lewis Research Center
-
For example: (a) Gordon, S., and B.J. McBride, Tech. Rpt. SP-273, NASA, NASA Lewis Research Center (1971); (b) Gaynor, W.H., "Applicability of Thermodynamic Calculations on the Prediction of Chemical Vapor Deposition Reactor Performance and Process-Property Relationships," BS Thesis, School of Chemical Engineering, Purdue University (1989); (c) I.M. Lee, A. Jansons, and C.G. Takoudis, "Effects of Water Vapor and Chlorine on the Epitaxial Growth of SiGe Films by Chemical Vapor Deposition; Thermodynamic Analysis," J. Vac. Sci. Tech., B 15, 880 (1997) and references therein
-
(1971)
Tech. Rpt. SP-273
-
-
Gordon, S.1
McBride, B.J.2
-
12
-
-
0343935113
-
-
BS Thesis, School of Chemical Engineering, Purdue University
-
For example: (a) Gordon, S., and B.J. McBride, Tech. Rpt. SP-273, NASA, NASA Lewis Research Center (1971); (b) Gaynor, W.H., "Applicability of Thermodynamic Calculations on the Prediction of Chemical Vapor Deposition Reactor Performance and Process-Property Relationships," BS Thesis, School of Chemical Engineering, Purdue University (1989); (c) I.M. Lee, A. Jansons, and C.G. Takoudis, "Effects of Water Vapor and Chlorine on the Epitaxial Growth of SiGe Films by Chemical Vapor Deposition; Thermodynamic Analysis," J. Vac. Sci. Tech., B 15, 880 (1997) and references therein
-
(1989)
Applicability of Thermodynamic Calculations on the Prediction of Chemical Vapor Deposition Reactor Performance and Process-Property Relationships
-
-
Gaynor, W.H.1
-
13
-
-
0000806244
-
Effects of Water Vapor and Chlorine on the Epitaxial Growth of SiGe Films by Chemical Vapor Deposition; Thermodynamic Analysis
-
and references therein
-
For example: (a) Gordon, S., and B.J. McBride, Tech. Rpt. SP-273, NASA, NASA Lewis Research Center (1971); (b) Gaynor, W.H., "Applicability of Thermodynamic Calculations on the Prediction of Chemical Vapor Deposition Reactor Performance and Process-Property Relationships," BS Thesis, School of Chemical Engineering, Purdue University (1989); (c) I.M. Lee, A. Jansons, and C.G. Takoudis, "Effects of Water Vapor and Chlorine on the Epitaxial Growth of SiGe Films by Chemical Vapor Deposition; Thermodynamic Analysis," J. Vac. Sci. Tech., B 15, 880 (1997) and references therein
-
(1997)
J. Vac. Sci. Tech., B
, vol.15
, pp. 880
-
-
Lee, I.M.1
Jansons, A.2
Takoudis, C.G.3
-
14
-
-
0011440925
-
-
Technology Modeling Associates, Inc., Sunnyvale, CA, October
-
TSuprem-4: User's Manual, Version 6.4, Technology Modeling Associates, Inc., Sunnyvale, CA, October (1996)
-
(1996)
TSuprem-4: User's Manual, Version 6.4
-
-
|