Characterization of high-resistivity CdTe crystals for γ -ray detectors

Materials Science and Engineering B

Volumn 41, Issue 3, 1996, Pages 345-351

  Shin, Hwa Yuh ^a,b   Sun, Cherng Yuan ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

ray detectors; Cadmium telluride; Mobility lifetime product; Temperature gradient solution growth method

Indexed keywords

CHARACTERIZATION; CRYSTAL GROWTH; CRYSTALS; DETECTORS; ELECTRIC CONDUCTIVITY; ELECTRONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING;

CADMIUM TELLURIDE; CHLORINE CONCENTRATION; DOPING CONCENTRATION; GAMMA RAY DETECTION TEST; GAMMA RAY DETECTORS; MOBILITY LIFETIME PRODUCT; TEMPERATURE GRADIENT SOLUTION GROWTH METHOD;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0011285652     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01900-9     Document Type: Article

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