Study of As precipitates in LEC SI-GaAs wafer by Raman probe

Materials Science and Engineering: B

Volumn 75, Issue 2-3, 2000, Pages 139-142

  Zhang, Fengyi ^a   Tu, Hailing ^a   Wang, Yonghong ^a   Qian, Jiayu ^a   Wang, Haitao ^a   Wang, Jing ^a   Song, Ping ^a  

^a GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS   (China)

Author keywords

As precipitate; Dislocation; GaAs; Raman spectrum

Indexed keywords

EID: 0011019510     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00349-4     Document Type: Article

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