Superconducting device with transistor-like properties including large current amplification

Applied Physics Letters

Volumn 77, Issue 3, 2000, Pages 447-449

  Pepe, G P ^a   Ammendola, G ^a   Peluso, G ^a   Barone, A ^a   Parlato, L ^b   Esposito, E ^c   Monaco, R ^c   Booth, N E ^d  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

^b SECOND UNIVERSITY OF NAPLES   (Italy)

^c CNR   (Italy)

^d UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE EFFECTS; TEMPERATURE; TEMPERATURE MEASUREMENT; TUNNEL JUNCTIONS;

DETECTION SYSTEM; DOUBLE TUNNEL JUNCTIONS; ELECTRONIC EXCITATION; LARGE CURRENT; LOW-TEMPERATURE MEASUREMENTS; NORMAL METALS; QUASI PARTICLES; RELAXATION ENERGIES;

ALUMINUM;

EID: 0010915537     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.127005     Document Type: Article

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