Influence of process parameters on the size of the bias-nucleated area for diamond deposition with plasma-enhanced chemical vapour deposition

Diamond and Related Materials

Volumn 6, Issue 1, 1997, Pages 6-11

  Lorenz, Hans Peter ^a   Schilling, Wolfgang ^a  

^a SIEMENS AG   (Germany)

Author keywords

Bias enhanced nucleation; Plasma enhanced chemical vapour deposition; Polished silicon; Process parameters

Indexed keywords

EID: 0010602266     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(96)00583-3     Document Type: Article

References (10)

1. P.K. Bachmann, W. Drawl, D. Knight, R. Weimer and R.F. Messier, in G.H. Johnson, A.R. Badzian and M.W. Geis (eds.), Diamond and Diamond-like Materials Synthesis, Pittsburgh, 1988, p. 99.
2. S. Yugo, T. Kanai, T. Kimura and T. Mato, Appl. Phys. Lett., 58 (1991) 1036-1038.
3. S.D. Wolter, J.T. Glass and B.R. Stoner, Thin Solid Films, 261 (1995) 4-11.
4. J. Gerber, M. Weiler, O. Sohr, K. Jung and H. Erhardt, Diamond Relat. Mater., 3 (1994) 506-509.
5. J. Robertson, Diamond Relat. Mater., 4 (1995) 549-552.
6. J. Robertson, J. Gerber, S. Sattel, M. Weiler, K. Jung and H. Erhardt, Appl. Phys. Lett., 66 (1995) 3287-3289.
7. J. Gerber, S. Sattel, K. Jung, H. Erhardt and J. Robertson, Diamond Relat. Mater., 4 (1995) 559-562.
8. R. Beckmann, B. Sobisch, W. Kulisch and C. Rau, Diamond Relat. Mater., 3 (1994) 555-559.
9. S.P. McGinnis, M.A. Kelly and S.B. Hagström, Appl. Phys. Lett., 66 (1995) 3117-3119.
10. B.R. Stone, G.H. Ma, S.D. Wolter, W. Zhu, Y.-C. Wang, R.F. Davis and J.T. Glass, Diamond Relat. Mater., 2 (1993) 142.