Coulomb drag at the onset of Anderson insulators

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 20, 1997, Pages 13301-13305

  Shimshoni, Efrat ^a  

^a UNIVERSITY OF HAIFA   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010516379     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.13301     Document Type: Article

References (39)

1. P. W. Anderson, Phys. Rev. 109, 1492 (1958); For a review and further references, see N. F. Mott and G. A. Davis, Electronic Processes in Non-crystalline Materials (Clarendon Press, Oxford, 1979).
2. P. A. Lee and T. V. Ramakrishnan, Rev. Mod. Phys. 57, 287 (1985), and references therein.
3. Y. Meir and B. L. Altshuler, Europhys. Lett. 37, 127 (1997).
4. For general introduction to the QHE and extensive references, see The Quantum Hall Effect, edited by R. E. Prange and S. M. Girvin (Springer-Verlag, New York, 1990).
5. Electron-Electron Interactions in Disordered Systems, edited by A. L. Efros and M. Pollak (North Holland, Amsterdam, 1985).
6. L. W. Wong, H. W. Jiang, and W. J. Schaff, Phys. Rev. B 54, 17 323 (1996); C.-T. Liang, J. E. F. Frost, M. Y. Simmons, D. A. Ritchie, and M. Pepper, Solid State Commun. (to be published).
7. The problem has been addressed theoretically by D. V. Khveshchenko, Phys. Rev. Lett. 77, 362 (1996); A. D. Mirlin and P. Wölfle (unpublished).
8. S. V. Kravchenko, G. V. Kravchenko, J. E. Furneaux, V. M. Pudalov, and M. D’Iorio, Phys. Rev. B 50, 8039 (1994).
9. S. V. Kravchenko, W. E. Mason, G. E. Bowker, J. E. Furneaux, V. M. Pudalov, and M. D’Iorio, 51, 7038 (1995).
10. S. V. Kravchenko, D. Simonian, M. P. Sarachik, W. E. Mason, and J. E. Furneaux, Phys. Rev. Lett. 77, 4938 (1996).
11. M. B. Pogrebinskii, Fiz. Tekh. Poluprovodn. 11, 637 (1977) [Sov. Phys. Semicond. 11, 372 (1977)];
12. P. M. Price, Physica B & C 117B, 750 (1983).
13. The Physics of Submicron Devices, edited by H. Grubin, D. K. Ferry, and C. Jacoboni (Plenum, New York, 1988).
14. P. M. Solomon, P. J. Price, D. J. Frank, and D. C. La Tulipe, Phys. Rev. Lett. 63, 2508 (1989).
15. T. J. Gramila, J. P. Eisenstein, A. H. MacDonald, L. N. Pfeiffer, and K. W. West, 66, 1216 (1991).
16. U. Sivan, P. M. Solomon, and H. Shtrikman, 68, 1196 (1992).
17. B. Laikhtman and P. M. Solomon, Phys. Rev. B 41, 9921 (1990).
18. Superlattices Microstruct. 10, 89 (1991).
19. A. P. Jauho and H. Smith, Phys. Rev. B 47, 4420 (1993).
20. H. C. Tso and P. Vasilopolous, 45, 1333 (1992).
21. H. C. Tso, P. Vasilopolous, and F. M. Peeters, Phys. Rev. Lett. 68, 2516 (1992).
22. I. I. Boiko, P. Vasilopolous, and Yu. Sirenko, Phys. Rev. B 45, 13 538 (1992).
23. L. Zheng and A. H. MacDonald, Phys. Rev. B 48, 8203 (1993).
24. E. Shimshoni and S. L. Sondhi, Phys. Rev. B 49, 11 484 (1994).
25. High Magnetic Fields in the Physics of Semiconductors, edited by D. Heiman (World Scientific, Singapore, 1995).
26. K. Flensberg and B. Y.-K. Hu, Phys. Rev. Lett. 73, 3572 (1994).
27. A. Kamenev and Y. Oreg, Phys. Rev. B 52, 7516 (1995).
28. K. Flensberg, B. Y.-K. Hu, A. P. Jauho, and J. M. Kinaret, 52, 14 761 (1995).
29. M. C. Bønsager, K. Flensberg, B. Y.-K. Hu, and A. P. Jauho, Phys. Rev. Lett. 77, 1366 (1996).
30. Y. B. Kim and A. J. Millis (unpublished).
31. I. Ussishkin and A. Stern, Phys. Rev. B 56, 4013 (1997).
32. G. Vignale and A. H. MacDonald, Phys. Rev. Lett. 76, 2786 (1996).
33. N. F. Mott, Philos. Mag. 13, 989 (1966).
34. A. L. Efros and B. I. Shklovskii, J. Phys. C 8, L49 (1975).
35. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, Berlin, 1984), and references therein.
36. D. Vollhardt and P. Wölfle, Phys. Rev. B 22, 4666 (1980).
37. A. L. Efros, Zh. Éksp. Teor. Fiz. 89, 1834 (1985) [Sov. Phys. JETP 62, 1057 (1985)].
38. I. L. Aleiner and B. I. Shklovskii, Int. J. Mod. Phys. B 8, 801 (1994).
39. D. G. Polyakov and B. I. Shklovskii, Phys. Rev. B 48, 11 167 (1993).