Microanalysis by focused ion beam secondary ion mass spectrometry (FIB-SIMS)

Journal of Trace and Microprobe Techniques

Volumn 15, Issue 4, 1997, Pages 593-599

  Nihei, Yoshimasa ^a   Tomiyasu, Bunbunoshin ^a   Sakamoto, Tetsuo ^a   Owari, Masanori ^b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Focused ion beam; Relative sensitivity factor; Secondary ion mass spectrometry; Three dimensional analysis

Indexed keywords

EID: 0010475242     PISSN: 07334680     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. Levi-Setti R, Chabala JM, Gavrilov K, Li J, Soni KK, Mogilevsky R (1994) Imaging with a high-resolution SIM. Secondary Ion Mass Spectrometry SIMS IX, A Benninghoven, Y Nihei, R Shimizu and H W Werner eds., John Wiley and Sons pp. 233-237.
2. Nihei Y, Satoh H, Tatsuzawa S, Owari M, Ataka M, Aihara R, Azuma K, Kammei Y (1987) High spatial resolution secondary ion mass spectrometry with parallel detection system. J. Vac. Sci. Technol. A5, 1254-1257.
3. Satoh H, Owari M, Nihei Y (1988) Quantitative analysis by submicron secondary ion mass spectrometry. J. Vac. Sci. Technol B6, 915-918.
4. Satoh H, Owari M, Nihei Y (1993) Relative sensitivity factors for submicron secondary ion mass spectrometry with gallium primary ion beam. Jpn. J. Appl. Phys. 32, 3616-3620.
5. Zehnpfenning J, Niehuis E, Cramer HG, Heller T, Möllers R, Terhorst M, Schnieders A, Zhang Z, Benninghoven A (1994) High resolution surface imaging and microanalysis of electronic materials by TOF-SIMS and Laser-SNMS. Secondary Ion Mass Spectrometry SIMS IX, A Benninghoven, Y Nihei, R Shimizu and HW Werner eds., John Wiley and Sons, pp. 561-564.