Atomic-order layer-by-layer role-share etching of silicon nitride using an electron cyclotron resonance plasma

Applied Physics Letters

Volumn 74, Issue 23, 1999, Pages 3573-3575

  Matsuura, Takashi ^a   Honda, Yasuhiko ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010415522     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124165     Document Type: Article

References (9)

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5. Calculated using the data in CRC Handbook of Chemistry and Physics, 79th ed., edited by D. R. Lide (CRC, Boca Raton, 1998), pp. 5-21.
6. T. Matsuura, H. Uetake, T. Ohmi, J. Murota, K. Fukuda, N. Mikoshiba, T. Kawashima, and Y. Yamashita, Appl. Phys. Lett. 56, 1339 (1990).
7. K. Suzuki, S. Okudaira, and I. Kanomata, J. Electrochem. Soc. 126, 1024 (1979).
8. T. Watanabe, M. Sakuraba, T. Matsuura, and J. Murota, in Chemical Vapor Deposition XIII (Electrochemical Society, Pennington, NJ, 1996), p. 504.
9. T. Watanabe, A. Ichikawa, M. Sakuraba, T. Matsuura, and J. Murota, J. Electrochem. Soc. 145, 4252 (1998).