Suppressing the parasitic bipolar action in fully-depleted MOSFETs/SIMOX by using back-side bias-temperature treatment

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 933-938

  Koizumi, H ^a   Shimaya, M ^a   Tsuchiya, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Bias temperature; fully depleted MOSFET; parasitic bipolar action; SIMOX

Indexed keywords

BIAS-TEMPERATURE; BIPOLAR ACTION; DEVICE CHARACTERISTICS; HOT CARRIER DEGRADATION; MOS-FET; SIMOX; SUPPRESSION MECHANISM; TREATMENT TECHNIQUES;

ELECTRIC BREAKDOWN; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0010380557     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662805     Document Type: Article

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