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Physical Review B

Volumn 38, Issue 17, 1988, Pages 12483-12486

Optical-absorption profile of a single modulation-doped AlxGa1-xAs/GaAs heterojunction

(3) Snow, E S a Glembocki, O J a Shanabrook, B V a

a NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010274590 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.38.12483 Document Type: Article

Times cited : (30)

References (19)

1
- 0040205586
- (1985) Appl. Phys. Lett. , vol.46 , pp. 970
- Glembocki, O.J.¹ Shanabrook, B.V.² Bottka, N.³ Beard, W.T.⁴ Comas, J.⁵

2
- 0021944767
- (1985) SPIE Proc. , vol.524 , pp. 86
- Glembocki, O.J.¹ Shanabrook, B.V.² Bottka, N.³ Beard, W.T.⁴ Comas, J.⁵

3
- 0039662053
- (1986) Appl. Phys. Lett. , vol.48 , pp. 653
- Parayanthal, P.¹ Shen, H.² Pollak, F.H.³ Tomkiewicz⁴ Drummond, T.J.⁵ Schulman, J.N.⁶

4
- 0041146195
- (1986) Appl. Phys. Lett. , vol.48 , pp. 1261
- Shen, H.¹ Parayanthal, P.² Pollak³ Glembocki, O.J.⁴ Shanabrook, B.V.⁵ Beard, W.T.⁶

5
- 0000187540
- (1987) Phys. Rev. B , vol.35 , pp. 2540
- Shanabrook, B.V.¹ Glembocki, O.J.² Beard, W.T.³

6
- 0000848434
- (1988) Phys. Rev. B , vol.37 , pp. 3042
- Theis, W.M.¹ Sanders, G.D.² Leak, C.E.³ Bajaj, K.K.⁴ Morkoç, H.⁵

7
- 84956087397
- Photoreflectance of two-dimensional electron gas in the selectively doped GaAs/AlxGa1-xas heterostructure grown by molecular beam epitaxy
- (1987) Chinese Physics Letters , vol.4 , pp. 283
- Yinsheng¹ Desheng²

8
- 0001720790
- edited by, T. E. Moss, North-Holland, New York
- (1980) Handbook on Semiconductors , pp. 109
- Aspnes, D.E.¹

9
- 11644278313
- Electroreflectance of GaAs-AlGaAs modulation-doped field-effect transistors
- (1985) Applied Physics Letters , vol.47 , pp. 163
- Hopfel, R.A.¹ Shah, J.² Gossard, A.C.³ Wiegmann, W.⁴

10
- 0041681589
- (1987) Appl. Phys. Lett. , vol.50 , pp. 43
- Aina, O.¹ Mattingly, M.² Juan, F.Y.³ Bhattacharya, P.K.⁴

11
- 84926811178
- W. A. J. A. van der Poel and
- (1987) J. Phys. (Paris) Colloq. , vol.48 , pp. C5-C127
- Molenkamp, L.W.¹ 't Hooft, G.W.² Foxon, C.T.³

12
- 0021515566
- (1984) Appl. Phys. Lett. , vol.45 , pp. 739
- Yuan, Y.R.¹ Mohammed, K.² Pudensi, M.A.A.³ Merz⁴

13
- 0023452629
- (1987) Solid State Commun. , vol.64 , pp. 711
- Ossau, W.¹ Bangert, E.² Weimann, G.³

14
- 36049057504
- (1967) Phys. Rev. , vol.159 , pp. 632
- Duke, C.B.¹

15
- 85032069152
- (1982) Rev. Mod. Phys. , vol.54 , pp. 437
- Ando¹ Fowler² Stern³

16
- 0004457553
- (1984) Phys. Rev. B , vol.30 , pp. 840
- Stern¹ Sarma²

17
- 84926820995
- Max Born and Emil Wolf, Principles of Optics (Pergamon, New York, 1975).

18
- 84926864398
- In the calculation, the 2D EG was assumed to arise from charge transfer from the doped Alx Ga1-x As_ layer. The electric field originating from the positive charge in the Alx Ga1-x As_ is screened from the GaAs depletion region by the 2D EG.

19
- 51649156541
- (1988) J. Electron. Mater. , vol.17 , pp. 161
- Bottka, N.¹ Gaskill, D.K.² Sillmon, R.S.³ Henry, R.⁴ Glosser, R.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.