Residual strain and threading dislocation density in InGaAs layers grown on Si substrates by metalorganic vapor-phase epitaxy

Applied Physics Letters

Volumn 78, Issue 1, 2001, Pages 93-95

  Takano, Y ^a   Kururi, T ^a   Kuwahara, K ^a   Fuke, S ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009978983     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1338502     Document Type: Article

References (15)

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