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Solid State Electronics

Volumn 38, Issue 6, 1995, Pages 1183-1189

Influence of low doped emitter and collector regions on high-frequency performance of SiGe-base HBTs

(3) Heinemann, B a Herzel, F a Zillmann, U a

a IHP (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009905710 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(94)00242-8 Document Type: Article

Times cited : (16)

References (21)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.