Impact of pocket implant and channel interface modeling on the reverse short channel effect

European Solid-State Device Research Conference

Volumn , Issue , 1998, Pages 116-119

  Puchner, H ^a   Aronowitz, S ^a   Kimball, J ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS;

CHANNEL INTERFACE; ENHANCED DIFFUSION; RECOMBINATION MODEL; REVERSE SHORT CHANNEL EFFECTS; STATE OF THE ART; SUB-MICRON CMOS TECHNOLOGY;

THRESHOLD VOLTAGE;

EID: 0009775559     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. H. Jacobs, IEDM Techn. Digest, pp.307-310,1993.
2. C. Rafferty, et al., IEDM Techn. Digest, pp.311-314,1993.
3. S. Halama et al., Microelectronics Journal, pp.137-158,1995.
4. Avant! Corp, TSUPREM4 Users Guide, Fremont CA.
5. M. Giles, 2nd Int. Symp. Process Physics and Modeling in Semiconductor Techn., pp.273-286,1991.