Bistable charge states in a photoexcited quasi-two-dimensional electron-hole system

JETP Letters

Volumn 71, Issue 8, 2000, Pages 322-326

  Volkov, O V ^a   Kukushkin, I V ^a   Kulakovskii D V ^a   Von Klitzing, K ^b   Eberl, K ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009730724     PISSN: 00213640     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.568342     Document Type: Article

References (8)

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2. O. V. Volkov, V. E. Zhitomirskiǐ, I. V. Kukushkin, et al., Pis'ma Zh. Éksp. Teor. Fiz. 66, 730 (1997) [JETP Lett. 66, 766 (1997)].
3. O. V. Volkov, V. E. Zhitomirskiǐ, I. V. Kukushkin, et al., Pis'ma Zh. Éksp. Teor. Fiz. 67, 707 (1998) [JETP Lett. 67, 744 (1998)].
4. O. V. Volkov, V. E. Zhitomirskiǐ, I. V. Kukushkin, et al., Pis'ma Zh. Éksp. Teor. Fiz. 67, 707 (1998) [JETP Lett. 67, 744 (1998)].
5. M. I. Nathan, Solid-State Electron. 29, 167 (1986).
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8. A. L. Efros and B. L. Shklovskiǐ, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer-Verlag, New York, 1984).