On the detailed growth of thin silver films on Si(111)

Surface Science

Volumn 172, Issue 2, 1986, Pages 433-441

  Qi Gao Zhu, ^a   An Dong Zhang, ^a   Williams, Ellen D ^a   Park, Robert L ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009605106     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(86)90765-X     Document Type: Article

References (18)

1. One-Dimensional Dislocations. I. Static Theory
2. One-Dimensional Dislocations. III. Influence of the Second Harmonic Term in the Potential Representation, on the Properties of the Model
3. Atomic Arrangement of the Si(111)-$\sqrt{3}{\times}\sqrt{3}$-Ag Structure Derived from Low-Energy Ion-Scattering Spectroscopy
4. Surface cleaning of Si(100) and Ag/Si(100): Characterisation by SEM, AES and RHEED
5. Nucleation, growth and the intermediate layer in Ag/Si(100) and Ag/Si(111)