First principles studies of point defects and impurities in cubic boron nitride

Materials Science and Engineering B

Volumn 51, Issue 1-3, 1998, Pages 53-57

  Castineira, J L P ^a   Leite, J R ^a   Scolfaro, L M R ^a   Enderlein, R ^a   Alves, J L A ^b   Leite Alves, H W ^b  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b FEDERAL UNIVERSITY OF SÃO JOÃO DEL REI   (Brazil)

Author keywords

Band structure; Boron nitride; Defects; Impurities

Indexed keywords

APPROXIMATION THEORY; BERYLLIUM; CRYSTAL IMPURITIES; ENERGY GAP; POINT DEFECTS; SEMICONDUCTOR DOPING; SUBSTITUTION REACTIONS;

FULL POTENTIAL LINEAR AUGMENTED PLANE WAVE (FLAPW) METHOD;

CUBIC BORON NITRIDE;

EID: 0009382954     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00228-6     Document Type: Article

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