A new approach of the box method adapted to any convex polygonal mesh

COMPEL - The international journal for computation and mathematics in electrical and electronic engineering

Volumn 13, Issue 4, 1994, Pages 599-607

  Mottet, S ^a   Vermeulen, P F ^b  

^a ORANGE LABS   (France)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009352673     PISSN: 03321649     EISSN: None     Source Type: Journal    
DOI: 10.1108/eb051879     Document Type: Review

References (5)

1. J.E. Viallet and S. Mottet, “Transient Simulation of Heterostructures,” NASECODE IV Conf., J.J.H. Miller (Ed.), Boole Press, Dublin, pp. 536–542, 1985.
2. S. Selberherr, “Analysis and Simulation of Semiconductor Devices,” Springer-Verlag, Wien, New-York (1983)
3. C. Simon, S. Mottet and J.E. Viallet, “Autoadaptive Mesh Refinement”, SISDEP 1991, Vol. 4, W. Fichtner and D. Aemmer (Ed.), Hartung-Gorre, pp. 225–233, 1991.
4. A.F. Franz and al. “Finite Boxes - A generalisation of the finite difference method suitable for semiconductor device simulation” IEEE Trans. ED, Vol. ED 30, No 9, pp 1070–1082 (1983)
5. N. Hitschfeld and W. Fichner, “#D Grid Generation for Semiconductor Devices Using a Fully Flexible refinement Approach,” SISDEP Vol. 5, Springer -Verlag, Wien, New-York, pp. 413–416, (1993)