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Volumn 31, Issue 9, 1997, Pages 886-892

Electronic structure of the Er-O6 complex in silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0009323846     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187148     Document Type: Article
Times cited : (4)

References (28)
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    • Rare-Earth Doped Semiconductors, edited by A. Polman, S. Coffa, R.N. Schwartz. Pittsburg, MRS
    • V.F. Masterov and L.G. Gerchikov, in Rare-Earth Doped Semiconductors, edited by A. Polman, S. Coffa, R.N. Schwartz. MRS Symp. Proc. (Pittsburg, MRS, 1996), Vol. 422, p. 227.
    • (1996) MRS Symp. Proc. , vol.422 , pp. 227
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  • 11
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    • Springer-Verlag, New York, in Russian trans. Mir, Moscow
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    • Bourgoin, J.1    Lanno, M.2
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    • Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, edited by A. Ryskin and V. Masterov
    • N.P. Il'in and V.F. Masterov, in Spectroscopy of Crystals Activated by Rare-Earth and Transition Metal Ions, edited by A. Ryskin and V. Masterov, SPIE 2706, 226 (1996).
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    • Il'in, N.P.1    Masterov, V.F.2
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.