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Journal of Applied Physics

Volumn 77, Issue 3, 1995, Pages 1256-1262

Erbium in crystal silicon: Optical activation, excitation, and concentration limits

(6) Polman, A a Van Den Hoven, G N a Custer, J S a Shin, J H a Serna, R a Alkemade, P F A b

a FOM INSTITUTE AMOLF (Netherlands)

b DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009293110 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.358927 Document Type: Article

Times cited : (121)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.