Electrical properties of bismuth layer-structured ferroelectrics Sr m-3+xBi4-xTim-xTaxO3m+3 (m=2, x = 1∼2 m=3, x=0∼2)

Ferroelectrics

Volumn 261, Issue 1, 2001, Pages 219-224

  Nagata, Hajime ^a   Takahashi, Takeshi ^a   Yano, Yuzuru ^a   Takenaka, Tadashi ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Bi4Ti3O 12; bismuth layer structured ferroelectrics; Curie temperature; D E hysteresis loop; electromechanical coupling factor; grain orientation

Indexed keywords

BI4TI3O 12; BISMUTH LAYER-STRUCTURED FERROELECTRICS; D-E HYSTERESIS LOOP; ELECTROMECHANICAL COUPLING FACTOR; GRAIN ORIENTATION;

BISMUTH; CURIE TEMPERATURE; ELECTROMECHANICAL COUPLING; ELECTROMECHANICAL DEVICES; FERROELECTRIC CERAMICS; PIEZOELECTRICITY; TANTALUM;

HYSTERESIS;

EID: 0009287549     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190108216288     Document Type: Conference Paper

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