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Volumn 69, Issue 17, 1996, Pages 2528-2530

Hot-electron power loss in a doped GaAs/AlGaAs superlattice at intermediate temperature studied by infrared differential spectroscopy

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EID: 0009258042     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117728     Document Type: Article
Times cited : (10)

References (24)
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    • Hirakawa, K.1    Sakaki, H.2
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    • H. Sakaki, K. Hirakawa, J. Yoshino, S. P. Svensson, Y. Sekiguchi, T. Hotta, S. Nishii, and N. Miura, Surf. Sci. 142, 306 (1984); K. Hirakawa and H. Sakaki, Appl. Phys. Lett. 49, 889 (1986); S. J. Manion, M. Artaki, M. A. Emanuel, J. J. Coleman, and K. Hess, Phys. Rev. B 35, 9203 (1987).
    • (1987) Phys. Rev. B , vol.35 , pp. 9203
    • Manion, S.J.1    Artaki, M.2    Emanuel, M.A.3    Coleman, J.J.4    Hess, K.5
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    • J. Shah, A. Pinczuk, H. L. Störmer, A. C. Gossard, and W. Wiegmann, Appl. Phys. Lett. 42, 44 (1983); 44, 322 (1984).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.