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Volumn 60, Issue 17, 1992, Pages 2051-2053

Characterization of recombination processes in multiple narrow asymmetric coupled quantum wells based on the dependence of photoluminescence on laser intensity

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Indexed keywords


EID: 0009087860     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.107111     Document Type: Article
Times cited : (49)

References (21)
  • 10
    • 84958494304 scopus 로고
    • Ultrafast Lasers Probe Phenomena in Bulk and Micro-structure Semiconductors, edited by R. R. Alfano
    • (1987) Proc. SPIE , vol.793 , pp. 30
    • Fouquet, J.E.1
  • 19
    • 84951158680 scopus 로고    scopus 로고
    • Using [formula omitted] and [formula omitted] where D is the trap density and a and b correspond to the trapping and nonradiative recombination rates, respectively, and using Eq. (1), one can obtain an expression for [formula omitted] as a function of laser intensity. It can be readily shown then that when the laser intensity is much larger than a critical value,[formula omitted] and [formula omitted] almost reach constant values (i.e. the traps are almost saturated) where [formula omitted]


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.