Specific behavior of chemically amplified systems with low activation energy under electron-beam exposure: Implementation of 248 and 193 nm resists

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2534-2540

  Mortini, B ^a   Tedesco, S ^b   Dal'Zotto, B ^b   Paniez, P ^c  

^a STMICROELECTRONICS   (Italy)

^b CEA GRENOBLE   (France)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008934574     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589680     Document Type: Article

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