Scanning tunneling microscopy

IBM Journal of Research and Development

Volumn 44, Issue 1-2, 2000, Pages 279-293

  Binnig, G ^a   Rohrer, H ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008858738     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.441.0279     Document Type: Article

References (111)

1. G. Binnig and H. Rohrer, "Scanning Tunneling Microscopy," Helv. Phys. Ada 55, 726 (1982).
2. R. H. Fowler and L. Nordheim, "Electron Emission in Intense Electric Fields," Proc. Roy. Soc. Land. A 119, 173 (1928); J. Frenkel, "On the Electrical Resistance of Contacts Between Solid Conductors," Phys. Rev. 36, 1604 (1930).
3. L. Esaki, "New Phenomenon in Narrow Germanium p-n Junctions," Phys. Rev. 109,603 (1958); I. Giaever, "Energy Gap in Superconductors Measured by Electron Tunneling," Phys. Rev. Lett. 5, 147(1960).
4. I. Giaever, "Electron Tunneling and Superconductivity," Rev. Mod. Phys. 46, 245 (1974).
5. R. Young, J. Ward, and F. Scire, "The Topografinen An Instrument for Measuring Surface Microtopography," Rev. Sei. Instrum. 43, 999 (1972);
6. W. A. Thompson and S. F. Hanrahan, "Thermal Drive Apparatus for Direct Vacuum Tunneling Experiments," Rev. Sei. Instrum. 47, 1303 (1976);
7. E. C. Teague, "Room Temperature Gold-Vacuum-Gold Tunneling Experiments," Bull. Amer. Phys. Soc. 23, 290 (1978);
8. U. Poppe, "Tunneling Experiments on a Single Crystal of ErRh4B4," Physica B&C 108, 805 (1981);
9. for references on the GaAs probe tunneling method see G. Güntherodt, W. A. Thompson, and F. Holtzberg, "Electron Tunneling into IntermediateValence Materials," Phys. Rev. Lett. 49, 1030 (1982).
10. The workshop was held in Oberlech, Austria, under the auspices of the IBM Europe Institute, July 1-5, 1985.
11. J. Simmons, "Generalized Formula for the Electric Tunnel Effect Between Similar Electrodes Separated by a Thin Insulating Film," J. Appl. Phys. 34, 1793 (1963).
12. See, e.g., C. B. Duke, "Tunneling in Solids," Academic Press, Inc., New York, 1969;
13. E. L. Wolf, "Electron Tunneling Spectroscopy," Rep. Prog. Phys. 41, 1439 (1978).
14. R. C. Jaklevic and J. Lambe, "Molecular Vibration Spectra by Electron Tunneling," Phys. Rev. Lett. 17, 1139 (1966); idem. Tunneling Spectroscopy: Capabilities, Applications, and New Techniques, P. Hansma, Ed., Plenum Press, New York, 1982.
15. J. Bardeen, "Tunneling from a Many-Particle Point of View," Phys. Rev. Lett. 6, 57(1961).
16. U.E. Stoll, A. Barajoff, A. Selloni, and P. Carnevali, "Current Distribution in the Scanning Vacuum Tunneling Microscope: A Free Electron Model," J. Phys. C17, 3073 (1984).
17. G. Binnig, H. Rohrer, Ch. Gerber, and E. Stoll, "Real-Space Observation of the Reconstruction of Au(lOO)," Surf. Sei. 144, 321 (1984).
18. J. B. P. Williamson, "Microphotography of Surfaces," Proc. Inst. Mech. Eng. London 182, 21 (1967-68); see also the American National Standard Surface Texture, ANSI B46.1 (1978 Edition).
19. G. Binnig, H. Fuchs, J. Kubier, F. Sal van, and A. R. Williams, "Scanning Tunneling Microscope Spectroscopy and the LowEnergy Excitation Spectrum of NiO," unpublished work;
20. R. Garcia, J. J. Saenz, and N. Garcia, "Conductivity and Structure of Thin Oxide Layers Grown on a Metal Substrate: Scanning Tunneling Microscopy in NiO on Ni(lOO)," Phys. Rev. B 33, 4439(1986).
21. H. H. Farrell and M. Levinson, "Scanning Tunneling Microscope as a Structure Modifying Tool," Phys. Rev. B 31, 3593(1985).
22. Dieter W. Pohl, "Some Design Criteria in Scanning Tunneling Microscopy," IBM J. Res. Develop. 30, pp. 417-427 (1986, this issue).
23. Hans-Werner Fink, "Mono-Atomic Tips for Scanning Tunneling Microscopy," IBM J. Res. Develop, (to be published in Sept. 1986).
24. Sang-11 Park and C. F. Quate, "Tunneling Microscopy of Graphite in Air," Appl. Phys. Lett. 48, 112 (1986);
25. A. Bryant, D. P. E. Smith, and C. F. Quate, "Imaging in Real Time with the Tunneling Microscope," Appl. Phys. Lett. 48, 832 (1986).
26. G. Binnig, H. Rohrer, Ch. Gerber, and E. Weibel, "Vacuum Tunneling," Physica 109 & HOB, 2075 (1982); idem, "Tunneling Through a Controllable Vacuum Gap," Appl. Phys. Lett. 40, 178(1982).
27. G. Binnig and H. Rohrer, "The Scanning Tunneling Microscope," Sei. Amer. 253, 50 (1985).
28. Ch. Gerber, G. Binnig, H. Fuchs, O. Marti, and H. Rohrer, "Scanning Tunneling Microscope Combined with a Scanning Electron Microscope," Rev. Sei. Instrum. 57, 221 (1986).
29. D. P. E. Smith and S. A. EIrod, "Magnetically Driven Micropositioners," Rev. Sei. Instrum. 56, 1970 (1985).
30. M. Ringger, B. W. Corb, H. R. Hidber, R. Schlögl, R. Wiesendanger, A. Stemmer, L. Roscnthaler, A. J. Brunner, P. Oelhafen, and H.-J. Güntherodt, "STM Activity at the University of Basel," IBM J. Res. Develop, (to be published in Sept. 1986).
31. Roy F. Willis, M. C. Payne, J. B. Payne, M. D. Pashley, and J. H. Coombs, "Vacuum Tunneling Microscopy-A Status Report," Festkörper Probleme XXV, p. 699, P.
32. Grosse, Ed., Friedr. Vieweg & Sohn, Braunschweig/Wiesbaden, Federal Republic of Germany, 1985.
33. J. Moreland, S. Alexander, M. Cox, R. Sonnenfeld, and P. Hansma, "Squeezable Electron Tunnel Junctions," Appl. Phys. Lett. 43, 387 (1983);
34. J. Moreland and P. K. Hansma, "Electromagnetic Squeezer for Compressing Squeezable Electron Tunnel Junctions," Rev. Sei. Instrum. 55, 399 (1984); P. K. Hansma, "Squeezable Tunneling Junctions," IBM J. Res. Develop. 30, pp. 370-373 (1986, this issue).
35. J. E. Demuth, R. J. Hamers, R. M. Tromp, and M. E. Weiland, "A Scanning Tunneling Microscope for Surface Science Studies," IBMJ. Res. Develop. 30, pp. 396-J02 (1986, this issue); idem, "A Simplified Scanning Tunneling Microscope for Surface Science Studies," J. Vac. Sei. Technol. A, accepted for publication.
36. B. Drake, R. Sonnenfeld, J. Schneir, P. K. Hansma, G. Slough, and R. V. Coleman, "A Tunneling Microscope for Operation in Air and Fluids," Rev. Sei. Instrum. 57,441 (1986).
37. G. F. A. van de Walle, J. W. Gerritsen, H. van Kempen, and P. Wyder, "High-Stability Tunneling Microscope," Rev. Sei. Instrum. 56, 1573 (1985).
38. P. Muralt, D. W. Pohl, and W. Denk, "Wide-Range, LowOperating-Voltage, Bimorph STM: Application äs Potentiometer," IBM J. Res. Develop, (to be published in Sept. 1986).
39. G. Binnig and H. Rohrer, "Scanning Tunneling Microscopy," Surf. Sei. 126, 236(1983).
40. A. L de Lozanne, S. A. Elrod, and C. F. Quate, "Spatial Variation in the Superconductivity of NbjSn Measured by LowTemperature Tunneling Microscopy," Phys. Rev. Lett. 54, 2433 (1985).
41. R. M. Feenstra and A. P. Fein, "Scanning Tunneling Microscopy of Cleaved Semiconductor Surfaces," IBM J. Res. Develop, (to be published in Sept. 1986).
42. R. S. Becker, J. Golovchenko, and B. S. Swartzentruber, "Electron Interferometry at Crystal Surfaces," Phys. Rev. Lett. 55,987(1985).
43. J. K. Gimzewski, A. Humbert, J. G. Bednorz, and B. Reihl, "Silver Films Condensed at 300 and 90 K: Scanning Tunneling Microscopy of Their Surface Topography," Phys. Rev. Lett. 55, 951 (1985).
44. H. R. Ott, Institute for Solid State Physics, ETH, Zurich, Switzerland, and H. Rohrer, unpublished work.
45. S. Vieira, "Behavior and Calibration of Some Piezoelectric Ceramics Used in the Scanning Tunneling Microscope," IBM J. Res. Develop, (to be published in Sept. 1986).
46. G. Binnig, H. Rohrer, Ch. Gerber, and E. Weibel, "7x7 Reconstruction on Si(l 11) Resolved in Real Space," Phys. Rev. Lett. 50, 120 (1983); idem, "(111) Facets as the Origin of Reconstructed Au(l 10) Surfaces," Surf. Sei. 131, L379 (1983);
47. A. M. Baro, G. Binnig, H. Rohrer, Ch. Gerber, E. Stoll, A. Baratoff, and F. Salvan, "Real-Space Observation of the 2 x 1 Structure of Chemisorbed Oxygen on Ni(l 10) by Scanning Tunneling Microscopy," Phys. Rev. Lett. 52, 1304 (1984).
48. R. S. Becker, J. A. Golovchenko, and B. S. Swartzentniber, "Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries," Phys. Rev. Lett. 54, 2678 (1985); idem, "Tunneling Images of the 5x5 Surface Reconstruction on Ge-Si(l 11)," Phys. Rev. B 32, 8455 (1985);
49. R. S. Becker, J. A. Golovchenko, E. G. McRae, and B. Swartzentruber, "Tunneling Images of Atomic Steps on the Si(111) 7 x 7 Surface," Phys. Rev. Lett. 55,2028 (1985).
50. R. V. Coleman, B. Drake, P. K. Hansma, and G. Slough, "Charge-Density Waves Observed with a Tunneling Microscope," Phys. Rev. Lett. 55, 394 (1985).
51. R. J. Behm, W. Hoesler, E. Ritter, and G. Binnig, "Correlation Between Domain Boundaries and Surface Steps-An STM Study on Reconstructed Pt(lOO)," Phys. Rev. Lett. 56, 228 (1986);
52. W. Hosier, R. J. Behm, and E. Ritter, "Defects on the Pt(100) Surface and Their Influence on Surface Reactions-A Scanning Tunneling Microscopy Study," IBM J. Res. Develop. 30, pp. 403-410 (1986, this issue).
53. R. M. Feenstra and A. P. Fein, "Surface Morphology of GaAs(! 10) by Scanning Tunneling Morphology," Phys. Rev. B 32, 1394 (1985);
54. R. M. Feenstra, W. A. Thompson, and A. P. Fein, "Real-Space Observation of r Bonded Chains and Surface Disorder on Si(l ! 1) 2 x 1," Phys. Rev. Lett. 56, 608 (1986);
55. R. M. Feenstra, W. A. Thompson, and A. P. Fein, "Scanning Tunneling Microscopy Studies of Si(l 11) 2 x 1 Surfaces," J. Vac. Sei. Technol. All 4 (May/June 1986).
56. R. M. Tromp, R. J. Hamers, and J. E. Dcmuth, "Si(IOO) Dimer Structure Observed with Scanning Tunneling Microscopy," Phys. Rev. Lett. 55, 1303 (1985);
57. R. J. Hamers, R. M. Tromp, and J. E. Demuth, "Scanning Tunneling Microscopy of Si(lOO)," unpublished work; idem, "Atomic and Electronic Contributions to Si(111) (7 x 7) Scanning Tunneling Microscopy Images," Phys. Rev. B, accepted for publication.
58. G. Binnig, H. Fuchs, Ch. Gerber, H. Rohrer, E. Stoll, and E. Tosatti, "Energy-Dependent State-Density Corrugation of a Graphite Surface as Seen by Scanning Tunneling Microscopy," Europhys. Lett. 1,31(1986).
59. J. Tersoffand D. R. Hamann, "Theory and Application for the Scanning Tunneling Microscope," Phys. Rev. Lett. 50, 1998 (1983); J. Tersoffand D. R. Hamann, "Theory of the Scanning Tunneling Microscope," Phys. Rev. B 31, 805 (1985).
60. A. Baratoff, "Theory of Scanning Tunneling Microscopy (STM)," Europhys. Conf. Abstr. 7B, 364 (1983).
61. N. Garcia, C. Ocal, and F. Flores, "Model Theory for Scanning Tunneling Microscopy: Application to Au(l 10) (1 x 2)," Phys. Rev. Leu. 50,2002 (1983); N. Garcia and F. Flores, "Theoretical Studies for Scanning Tunneling Microscopy," Physica 127B, 137(1984).
62. A. Baratoff, "Theory of Scanning Tunneling MicroscopyMethods and Approximations," Physica 127B, 143 (1984).
63. E. Stoll, "Resolution of the Scanning Tunneling Microscope," Surf. Sei. 143, L411(1984).
64. G. Binnig, N. Garcia, H. Rohrer, J. M. Soler, and F. Flores, "Electron-Metal-Surface Interaction Potential with Vacuum Tunneling: Observation of the Image Force," Phys. Rev. B 30, 4816(1984).
65. N. Garcia, "Theory of Scanning Tunneling Microscopy and Spectroscopy: Resolution, Image, and Field States and Thin Oxide Layers," IBM J. Res. Develop, (to be published in Sept. 1986).
66. R. Smoluchowski, "Anisotropy of the Electronic Work Function of Metals," Phys. Rev. 60,661 (1941); N. D. Lang, "Density Functional Formalism and the Electronic Structure of Metal Surfaces," Solid State Phys. 2, 225 (1973).
67. Cleaved pyrolithic graphite appears to become the ideal "test surface" for STM. A lateral resolution under 2 A is readily achievable in vacuum and air (J. Gimzewski, H. Güntherodt, A. Humbert, and H. Salemink, private communications) and even under water [R. Sonnenfeld and P. K. Hansma, "Atomic Resolution Microscopy in Water," Science 232, 211 (April 11, 1986).] The crucial role of the electronic surface structure itself in obtaining such high resolution on special surfaces such as that of graphite is pointed out by J. Tersoff, "Anomalous Corrugation in Scanning Tunneling Microscopy of LowDimensionality Semiconductors and Semimetals," Phys. Rev. Lett.56(\9&6).
68. N. Lang, "Vacuum Tunneling Current from an Adsorbed Atom," Phys. Rev. Lett. 55, 230 (1985); idem, "Electronic Structure and Tunneling Current for Chemisorbed Atoms," 1BMJ. Res. Develop. 30, pp. 374-379 (1986, this issue); idem, "Theory of Single Atom Imaging in the Scanning Tunneling Microscope," Phys. Rev. Lett. 56, 1164 (1986).
69. G. Binnig, H. Rohrer, F. Salvan, Ch. Gerber, and A. M. Barö, "Revisiting the 7 X 7 Reconstruction of Si(l 11)," Surf. Sei. 157, L373(1985).
70. A. Humbert, J. K. Gimzewski. and B. Reihl, "Post-Annealing of Coldly Condensed Ag Films: Influence of Pyridine Preadsorption," Phys. Rev. B 32,4252 (1985).
71. Th. Berghaus, H. Neddermeyer, and St. Tosch, "A Scanning Tunneling Microscope for the Investigation of the Growth of Metal Films on Semiconductor Surfaces," IBM J. Res. Develop. (to be published in Sept. 1986).
72. R. Miranda, N. Garcia, A. M. Barô, R. Garcia, J. L. Pena, and H. Rohrer, "Technological Applications of Scanning Tunneling Microscopy at Atmospheric Pressure," Appl. Phys. Lett. 47, 367 (1985).
73. S. Chiang and R. J. Wilson, "Scanning Tunneling Microscopy," Improved Methods for Examining the Submicron World, Plenum Press (to be published in 1986); idem, "Construction of a UHV Scanning Tunneling Microscope," IBM J. Res. Develop. (to be published in Sept. 1986).
74. R. M. Feenstra and G. S. Oehrlein, "Surface Morphology of Oxidized and Ion-Etched Silicon by Scanning Tunneling Microscopy,"/ Vac. Sei. Technol.B3,1136 (1985); idem. Appl. Phys. Lett. 47,97 (1985).
75. J. K. Gimzewski, A. Humbert, D. W. Pohl, and S. Veprek, "Scanning Tunneling Microscopy of Nanocrystalline Silicon Surfaces," Surf. Sei. 168, 795 (1986).
76. M. Ringger, H. R. Hidber, R. Schlögl, P. Oelhafen, H.-J. Güntherodt, K. Wandelt, and G. Ertl, "Vacuum Tunneling Applied to the Surface Topography of a Pd(lOO) Surface," Proceedings of the 17th International Conference on Low Temperature Physics LT-17, 25 (1984), North-Holland, Amsterdam.
77. A. M. Barö, R. Miranda, and J. L. Carrascosa, "Application to Biology and Technology of the Scanning Tunneling Microscope Operated in Air at Ambient Pressure," IBM J. Res. Develop. 30, pp. 380-386 (1986, this issue).
78. N. Garcia, A. M. Barö, R. Miranda, H. Rohrer, Ch. Gerber, R. Garcia Cantu, and J. L. Pena, "Surface Roughness Standards, Obtained with the Scanning Tunneling Microscope Operated at Atmospheric Air Pressure," Metrologia 21, 135 (1985).
79. G. Binnig and H. Rohrer, "Scanning Tunneling Microscopy," Trends in Physics 1984, J. Janta and J. Pantoflicek, Eds., European Physical Society, 1985, pp. 38-46.
80. A. M. Barö, R. Miranda, J. Alaman, N. Garcia, G. Binnig, H. Rohrer, Ch. Gerber, and J. L. Carrascosa, "Determination of Surface Topography of Biological Specimens at High Resolution by Scanning Tunneling Microscopy," Naturells, 253 (1985).
81. F. Flores and N. Garcia, "Voltage Drop in thé Experiments of Scanning Tunneling Microscopy for Si," Phys. Rev. B 30,2289 (1984).
82. G. Binnig, K. H. Frank, H. Fuchs, N. Garcia, B. Reihl, H. Rohrer, F. Salvan, and A. R. Williams, "Tunneling Spectroscopy and Inverse Photoemission: Image and Field States," Phys. Rev. Lett. 55, 991 (1985).
83. W. J. Kaiser and R. C. Jaklevic, "Scanning Tunneling Microscopy of Surfaces," Bull. Amer. Phys. Soc. 30, 309 (1985); idem, "Spectroscopy of Electronic States of Metals with a Scanning Tunneling Microscope," IBM J. Res. Develop. 30, pp. 410-416 (1986, this issue).
84. A. Baratoff, G. Binnig, H. Fuchs, F. Salvan, and E. Stoll, "Tunneling Microscopy and Spectroscopy of Semiconductor Surfaces and Interfaces," Surf. Sei. 168, 734 (1986).
85. S. A. Elrod, A. Bryant, A. L. de Lozanne, S. Park, D. Smith, and C. F. Quate, "Tunneling Microscopy from 300 to 4.2 K," IBM J. Res. Develop. 30, pp. 387-395 (1986, this issue).
86. R. S. Becker, J. A. Golovchenko, D. R. Hamann, and B. S. Swartzentruber, "Real-Space Observation of Surface States on Si(l 11) 7 x 7 with the Tunneling Microscope," Phys. Rev. Lett. 55,2032(1985).
87. K. H. Gundlach, "Zur Berechnung des Tunnelstromes durch eine Trapezförmige Potentialstufe," Solid-Slate Electron. 9, 949 (1966).
88. N. Garcia and J. Solana, "Surface States in a One-Dimensional Crystal," Surf. Sei. 36, 262 (1973); P. M. Echenique and J. B. Pendry, "The Existence and Detection of Rydberg States at Surfaces," J. Phys. Cil, 2056 (1978);
89. for further references see N. Garcia, B. Reihl, K. H. Frank, and A. R. Williams, "Image States: Binding Energies, Effective Masses, and Surface Corrugation," Phys. Rev. Lett. 54, 591 (1985).
90. G. Binnig, N. Garcia, and H. Rohrer, "Conductivity Sensitivity of Inelastic Scanning Tunneling Microscopy," Phys. Rev. B 32, 1336(1985).
91. B. N. J. Persson and J. E. Demuth, "Inelastic Electron Tunneling from a Metal Tip," Solid Stale Commun. 57, 769 (1986).
92. F. Flores, P. M. Echenique, and R. H. Ritchie, "Energy Dissipation Processes in the Scanning Tunneling Microscopy," Universidad Autonoma de Madrid, unpublished work.
93. E. Stoll, "Information- and Image-Processing of Scanning Tunneling Microscope Data," Proceedings of the 2nd International Technical Symposium on Optical and ElectroOptical Applied Science and Engineering, Cannes, Dec. 2-6, 1985, in press.
94. A. Baratoff, G. Binnig, H. Fuchs, H. Rohrer, E. Stoll, and F. Salvan, "Interpretation of Scanning Tunneling Spectroscopic (STS) Images-Applications to 7 x 7 Si(l 11)," Europhys. Conf. Abstr. 10B, 0-31 (1986); idem. Surf. Sei. (accepted for publication); R. J. Hamers, R. M. Tromp, and J. E. Demuth, "Surface Electronic Structure of Si(l 11) 7 x 7 Resolved in Real Space," Phys. Rev. Lett. 56 (1986).
95. E. Conrad and M. B. Webb, "Xe and Kr Adsorption on the Si(Hl)7 x 7 Surface,"Surf. Sei. 129, 37 (1983);
96. J. E. Demuth and A. J. Schell-Sorokin, "Rare Gas Titration Studies of Si(l 11) Surfaces,"/ Vac. Sei. Techno!. A2, 808 (1983).
97. G. Binnig and H. Rohrer, "Scanning Tunneling Microscopy," Surf. Sei. 126, 236(1983).
98. M. S. Khaikin and A. M. Trojanovsky, "A Scanning Tunneling Microscope with a Modulated Tunneling Gap Operating in a Liquid Medium," Pis'ma Zh. Tech. Phys. 11, 1236 (1985).
99. P. Murait and D. W. Pohl, "Scanning Tunneling Potentiometry," Appl. Phys. Leu. 48, 514 (1986).
100. G. Binnig, H. Fuchs, and E. Stoll, "Surface Diffusion of Oxygen Atoms Individually Observed by STM," Surf. Sei. (1986, in press).
101. M. E. Weiland and R. H. Koch, "Spatial Location of Electron Trapping Defects on Silicon by Scanning Tunneling Microscopy," Appl. Phys. Lett. 48, 724 (1986).
102. M. D. Pashley, J. B. Pethica, and J. Coombs, "Scanning Tunneling Microscope Studies," Surf. Sei. 152/153, 27 (1985).
103. J. H. Coombs and J. B. Pethica, "Properties of Vacuum Tunneling Currents: Anomalous Barrier Heights," IBM J. Res. Develop, (to be published in Sept. 1986).
104. R. Gomer, "Extensions of the Field Emission Fluctuation Method for the Determination of Surface Diffusion Coefficients,"/ Appl. Phys. A39, 1 (1986).
105. D. W. Pohl, W. Denk, and M. Lanz, "Optical Stethoscopy: Image Recording with Resolution X/20," Appl. Phys. Lett. 44, 651 (1984);
106. U. Düng, D. W. Pohl, and F. Rohner, "Near-Field Optical Scanning Microscopy," J. Appl. Phys. 59 (1986); idem, "Near-Field Optical Scanning Microscopy with Tunnel-Distance Regulation," IBM J. Res. Develop, (to be published in Sept. 1986).
107. (a) G. Binnig, C. F. Quate, and Ch. Gerber, "The Atomic Force Microscope," Phys. Rev. Lett. 56, 930 (1986); (b) J. M. Soler, A. M. Barö, N. Garcia, and H. Rohrer, "Interatomic Forces in Scanning Tunneling Microscopy: Giant Corrugations of the Graphite Surface," unpublished work; (c) U. Dürig, J. Gimzewski, and D. W. Pohl, "Experimental Observations of Forces Acting During Scanning Tunneling Microscopy," unpublished work.
108. David W. Abraham, H. Jonathon Mamin, Eric Ganz, and John Clarke, "Surface Modification with the Scanning Tunneling Microscope," IBM J. Res. Develop, (to be published in Sept. 1986).
109. H. van Kempen and G. F. A. van de Walle, "Applications of a High-Stability Scanning Tunneling Microscope," IBM J. Res. Develop, (to be published in Sept. 1986).
110. M. Ringger, H. R. Hidber, R. Schlögl, P. Oelhafen, and H.-J. Güntherodt, "Nanometer Lithography with the Scanning Tunneling Microscope," Appl. Phys. Leu. 46,832 (1985).
111. M. A. McCord and R. F. W. Pease, "Lithography with the Scanning Tunneling Microscope," J. Vac. Sei. Technol. B4, 86 (1986).