Atomic level stress and light emission of Ce activated SrS thin films

Journal of Applied Physics

Volumn 82, Issue 4, 1997, Pages 1812-1814

  Warren, W L ^a   Vanheusden, K ^a   Tallant, D R ^a   Seager, C H ^a   Sun, S S ^b   Evans, D R ^c   Dennis, W M ^c   Soininen, Erkki ^d   Bullington, J A ^e  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b Planar America Inc   (United States)

^c UNIVERSITY OF GEORGIA   (United States)

^d Planar Systems Inc Finland   (Finland)

^e Adv Mat Mfg Processes Economic C   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008700813     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366284     Document Type: Article

References (16)

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13. The smaller distortion of the Ce octahedron for the films grown on Si substrates may result since growth along the [200] direction (a principal axis) is likely to induce less stress than growth along the [111] direction in a polycrystalline film with a cubic unit cell.
14. ⊥ transitions.
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16. Both films exhibit deviations from a single exponential decay as described by D. R. Evans, G. T. Warren, W. M. Dennis, S.-S. Sun, and T. Nguyer, J. Lumin, (in press).