Contact resistance of SnO2 films determined by the transmission line model method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 6 A, 1998, Pages 3284-3285

  Kamimura, Kiichi ^a   Wang, ZhanHe ^a   Onuma, Yoshiharu ^a  

^a SHINSHU UNIVERSITY   (Japan)

Author keywords

Annealing; Contact resistance; SnO2; TLM

Indexed keywords

EID: 0008652077     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.3284     Document Type: Article

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