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Physical Review B
Volumn 51, Issue 11, 1995, Pages 7310-7313
Modification of valence-band symmetry and Auger threshold energy in biaxially compressed InAs1-xSbx
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Indexed keywords

EID: 0008622325     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.51.7310     Document Type: Article
Times cited : (21)
References (24)
  • 11
    • 84927807773 scopus 로고    scopus 로고
    • and references therein.
  • 17
    • 84927807771 scopus 로고    scopus 로고
    • The three-dimensional (3D) expressions for radiative and Auger lifetime are both proportional to T3/2. The SLS will display an intermediate-temperature dependence between the 2D and 3D expressions, and corrections to the temperature dependence of Eq. (2) are negligible.
  • 24
    • 0026891678 scopus 로고
    • Assuming an infinite hole mass in the unstrained alloys, Eq. (1) can be rewritten as dE over dB approx {μB}over {mestar}left [ 1- 1.6 over 3 left ( {mestarR} over {μBB} right )2/3- {2 μBκ B} over {mestar Egap}right ] ~, where μB is the Bohr magneton. InAs values were used to evaluate this expression. The middle term is a correction for exciton binding [R=1.8 meV, see E. A. Johnson, Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1967), Vol. 3, p. 228] and the last term is a correction for the nonparabolicity of the conduction band [κ = 1.6, ]. The larger electron effective mass observed in the InAsSb0.070.93 alloy may be caused, in part, by ordering of the alloy.
    • (1992) Semicond. Sci. Technol. , vol.7 , pp. 985
    • Sundaram, G.M.1

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.