The van der Waals epitaxial growth of GaSe on Si(111)

Journal of Applied Physics

Volumn 81, Issue 11, 1997, Pages 7289-7294

  Vinh, Le Thanh ^a   Eddrief, M ^b   Mahan, John E ^c,e   Vantomme, André ^c,f   Song, J H ^d,g   Nicolet, Marc A ^d  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b SORBONNE UNIVERSITÉ   (France)

^c KU LEUVEN   (Belgium)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^e Department of Civil and Environmental Engineering   (United States)

^f FUND FOR SCIENTIFIC RESEARCH   (Belgium)

^g Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008570949     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365326     Document Type: Article

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