Influence of phosphorus diffusion on the recombination strength of dislocations in float zone silicon wafers

Journal of Applied Physics

Volumn 80, Issue 9, 1996, Pages 4921-4927

  Simon, J J ^a,b   Perichaud I ^a,b   Burle, N ^a,c   Pasquinelli, M ^a,b   Martinuzzi, S ^a,b  

^a Fac des Sci et Techniques   (France)

^b EA 882 DSO

^c MATOP URA CNRS 1530

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008437148     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363535     Document Type: Article

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