Raman investigation of InSe doped with GaS

Materials Science and Engineering B

Volumn 38, Issue 1-2, 1996, Pages 161-170

  Zolfaghari, Mahmoud ^a   Jain, K P ^a   Mavi, H S ^a   Balkanski, M ^b   Julien, C ^b   Chevy, A ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b CNRS   (France)

Author keywords

Indium selenide; Layer structure; Resonant Raman scattering

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON RESONANCE; ELECTRON SCATTERING; EXCITONS; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TOPOLOGY;

EXCITON ENERGY; INDIUM SELENIDE; LAYER STRUCTURE; PHONON MOLAR MODES; RESONANT RAMAN SCATTERING; TOPOLOGICAL DISORDER;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0008429829     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01375-X     Document Type: Article

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