On epitaxy and orientation relationships in bicrystals

Solid State Phenomena

Volumn 59-60, Issue , 1998, Pages 51-62

  Pirouz, P ^a   Ernst, F ^b   Ikuhara, Y ^c  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; MATHEMATICAL MODELS; SAPPHIRE; SILICON; SUBSTRATES;

ADATOMS; GEOMETRICAL METHOD;

POLYCRYSTALS;

EID: 0008379860     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.59-60.51     Document Type: Article

References (35)

1. G. Friedel, Leçons de Cristollagraphie, (Paris, 1925).
2. M. L. Kronberg and M. H. Wilson, Secondary Recrystallization in Copper, Trans. Am. Inst. Min. (Metall.) Engrs. 185(8), 501-514, (1949).
3. A. P. Sutton and R. W. Balluffi, Interfaces in Crystalline Materials, (Oxford University Press, Oxford, 1995).
4. W. Bollmann, Crystal Defects and Crystalline Interfaces, (Springer Verlag, Berlin, 1970).
5. A. P. Sutton and R. W. Balluffi, On Geometric Criteria for Low Interfacial Energy, Acta metall. 35(9), 2177-2201, (1987).
6. R. Bonnet and F. Durand, Study of intercrystalline boundaries in terms of the coincidence lattice concept, Phil. Mag. 32, 997-1006, (1975).
7. R. Bonnet and F. Durand, A General Analytical Method to Find a Basis for the DSC Lattice, Scripta Met. 9, 935-939, (1975).
8. R. W. Balluffi, A. Brokman and A. H. King, CSL/DSC Lattice Model for General Crystal-Crystal Boundaries and Their Line Defects, Acta metall, 30, 1453-1470, (1982).
9. E. C. Bain, The Nature of Martensite, Trans AIME 70, 25, (1924).
10. G. Kurdjumov and G. Sachs, Über den Mechanismus der Stahlhärtung, Zeit. Physik 64, 325-343, (1930).
11. Z. Nishiyama, X-Ray Investigation of the Mechanism of the Transformation from Face-Centered Cubic Lattice to Body-Centered Cubic, Sci. Rpts. Tohoku Imp. Univ. 23, 637-664, (1934).
12. G. Wassermann, Über den Mechanismus der α → γ Umwandlung des Eisens, Mit. K. W. I. Eisenforsch 17, 149-155, (1935).
13. M. S. Wechsler, D. S. Lieberman and T. A. Read, On the Theory of the Formation of Martensite, Trans. Met. Soc. AIME 197(11), 1503-1515, (1953).
14. J. S. Bowles and J. K. Mackenzie, The Crystallography of Martensite Transformations I, Acta Met. 2(1), 129-137, (1954).
15. J. S. Bowles and J. K. Mackenzie, The Crystallography of Martensite Transformations II, Acta Met. 2(1), 138-147, (1954).
16. J. S. Bowles and J. K. Mackenzie, The Crystallography of Martensite Transformations III. Face-Centred Cubic to Body-Centred Tetragonal Transformations, Acta Met. 2(3), 224-234, (1954).
17. Y. Ikuhara and P. Pirouz, Orientation Relationship in Large-Mismatched Bicrystals and Coincidence of Reciprocal Lattice Points (CRLP), Materials Science Forum 207-209 (Part I), 121-124, (1996).
18. Y. Ikuhara and P. Pirouz, A high-resolution electron microscopy study of vanadium deposited on the basal plane of sapphire, Ultramicroscopy 52, 421-428, (1993).
19. 3 Interfaces Grown by Molecular Beam Epitaxy, Philos. Mag. A 70(1), 75-97, (1994).
20. Y. Ikuhara, P. Pirouz, S. Yadavalli and C. P. Flynn, Structure of V-MgO and MgO-V Interfaces, Philos. Mag. A 72(1), 179-198, (1995).
21. 3 Interfaces, Philos. Mag. A 65(2), 403-425, (1992).
22. 3 Multilayers, Acta metall. matter. 40(Supplement), S237-S247, (1992).
23. F. C. Frank, Orientation Mapping, MRS Bulletin 13(3), 24-30, (1988).
24. F. C. Frank, Orientation Mapping, Proceedings of the "Proceedings of the European Workshop on Polymer NDE", ed. K. H. G. Ashbee, pp. 178-189, (Technomic Publishing Co., Lancaster, PA, Vimeiro, Portugal, 1984).
25. S. L. Altman, Rotations, Quaternions, and Double Groups, (Oxford University Press, Oxford, 1986).
26. F. Ernst (1996). Unpublished research.
27. H. M. Manasevit, A. Miller, F. L. Morritz and R. Nolder, Heteroepitaxial Silicon-Aluminum Oxide Interface, Part I.-Experimental Evidence for Epitaxial Relationships of Single-Crystal Silicon on Sapphire; An Overview of the Growth Mechanism, Trans. Met. Soc. AIME 233(3), 540-549, (1965).
28. R. Nolder and I. Cardoff, Heteroepitaxial Silicon-Aluminum Oxide Interface. Part II -Orientation Relations of Single-Crystal Silicon on Alpha Aluminum Oxide, Trans. Met. Soc. AIME 233(3), 549-556, (1965).
29. F. A. Ponce and J. Aranovich, Imaging of the silicon on sapphire interface by high-resolution transmission electron microscopy, Appl. Phys. Lett. 38(6), 439-441, (1981).
30. M. Aindow and R. C. Pond, On epitaxial misorientarions, Phil. Mag. A 63(4), 667-694, (1991).
31. 3), J. Electron Microscopy Technique 2, 247-258, (1985).
32. A. D. Novaco and J. P. McTague, Orientational Epitaxy - the Orientational Ordering of Incommensurate Structures, Phys. Rev. Letts. 38(22), 1286-1289, (1977).
33. J. P. McTague and A. D. Novaco, Substrate-induced strain and orientational ordering in adsorbed monolayers, Phys. Rev. B 19(10), 5299-5306, (1979).
34. I. Markov and S. Stoyanov, Mechanisms of epitaxial growth, Contemp. Phys. 28(3), 267-320, (1987).
35. J. Villain and M. B. Gordon, Static Properties of Physisorbed Monolayers in Their Solid Phases, Surface Science 125, 1-50, (1983).