Resonant exciton effects in InAs monolayer insertions in a GaAs matrix

Journal of Applied Physics

Volumn 79, Issue 9, 1996, Pages 7164-7168

  Wang, P D ^a,c   Ledentsov, N N ^a,b   Sotomayor Torres, C M ^a   Zhukov, A E ^b   Kop'ev, P S ^b   Ustinov, V M ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

^c 236 Hesburgh Center for International Studies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008200990     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361428     Document Type: Article

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