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Volumn 42, Issue 3, 1999, Pages 282-287

Transient transport of electrons in thin film electroluminescent devices

Author keywords

Electroluminescence; Electron transport; Monte carlo method; Transient process

Indexed keywords


EID: 0008192608     PISSN: 10069321     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02916774     Document Type: Article
Times cited : (7)

References (9)
  • 2
    • 0001879183 scopus 로고    scopus 로고
    • High-field conduction in semi-insulating ZnS films
    • Bringuier, E., High-field conduction in semi-insulating ZnS films, Philosoph. Magaz. B, 1997, 75(2): 209.
    • (1997) Philosoph. Magaz. B , vol.75 , Issue.2 , pp. 209
    • Bringuier, E.1
  • 4
    • 36549098172 scopus 로고
    • Theory of high-field electronic transport in bulk ZnS and ZnSe
    • Brennan, K., Theory of high-field electronic transport in bulk ZnS and ZnSe, J. Appl. Phys., 1988, 64(8): 4024.
    • (1988) J. Appl. Phys. , vol.64 , Issue.8 , pp. 4024
    • Brennan, K.1
  • 5
    • 36449009839 scopus 로고
    • Monte Carlo simulation of electron transport in alternating-current thin film electroluminescent devices
    • Bhattacharyya, K., Goodnick, S. M., Wager, J. F., Monte Carlo simulation of electron transport in alternating-current thin film electroluminescent devices, J. Appl. Phys., 1993, 73(7): 3390.
    • (1993) J. Appl. Phys. , vol.73 , Issue.7 , pp. 3390
    • Bhattacharyya, K.1    Goodnick, S.M.2    Wager, J.F.3
  • 6
    • 0000754628 scopus 로고
    • Charge transfer in ZnS-type electroluminescence
    • Bringuier, E., Charge transfer in ZnS-type electroluminescence, J. Appl. Phys., 1989, 66(3): 1314.
    • (1989) J. Appl. Phys. , vol.66 , Issue.3 , pp. 1314
    • Bringuier, E.1
  • 7
    • 0019637296 scopus 로고
    • The dependences of electroluminescent characteristics of ZnS: Mn thin films upon their device parameters
    • Sasakura, H., Kobayashi, H., Tanaka, S. et al., The dependences of electroluminescent characteristics of ZnS: Mn thin films upon their device parameters, J. Appl. Phys., 1981,52(11): 6901.
    • (1981) J. Appl. Phys. , vol.52 , Issue.11 , pp. 6901
    • Sasakura, H.1    Kobayashi, H.2    Tanaka, S.3
  • 9
    • 0029276105 scopus 로고
    • Monte Carlo simulation of high field electron transport in ZnS
    • Fogarty, J., Kong, W., Solanki, R., Monte Carlo simulation of high field electron transport in ZnS, Solid-State Electronics, 1995, 38(3): 653.
    • (1995) Solid-state Electronics , vol.38 , Issue.3 , pp. 653
    • Fogarty, J.1    Kong, W.2    Solanki, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.