Determination of diffusion lengths of minority carriers in Cd1-xZnxTe (x ≈ 0.04) by the EBIC method

Semiconductor Science and Technology

Volumn 13, Issue 3, 1998, Pages 314-317

  Franc, J ^a   Belas, E ^a   Toth, A L ^b   Ivanov, Yu M ^a   Sitter, H ^c   Moravec, P ^a   Hoschl P ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0007761603     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/3/011     Document Type: Article

References (8)

1. Lastraz-Martinez A, Raccah P M and Triboulet M 1980 Appl. Phys. Lett. 36 469
2. Edwards S W, Myers T H and Schetzina J F 1980 Phys. Rev. B 21 4697
3. Maximovski S N, Revocatova I P, Salman V M, Selezneva M A and Lebedev P N 1977 Rev. Phys. Appl 12 161
4. Chu T L, Chu S S, Pauleau Y, Murthy K, Stokes E D and Russel PE 1983 J. Appl. Phys. 54 398
5. Mitchell K, Fahrenbuch A L and Bube R H 1977 J. Appl. Phys. 48 829
6. Marfaing Y 1994 EMIS Datareviews vol 10 (London: INSPEC) p 254
7. Ioannou D E and Dimitriadis CD 1982 IEEE Trans. Electron Devices 29 445
8. Toth A L 1996 Proc. EMAS'96 ed J L Lábár, E Heikinheimo and P Nicholson, p 69