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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1654-1657

Analytic representations of the dielectric functions of crystalline and amorphous Si and crystalline Ge for very large scale integrated device and structural modeling

(5) Leng, J a Opsal, J a Chu, H a Senko, M a Aspnes, D E b

a Therma Wave Inc (United States)

b Aspnes Associates Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; ANALYTIC REPRESENTATION; CRITICAL POINTS; CRYSTALLINE GE; DIELECTRIC FUNCTIONS; SEMICONDUCTING MATERIALS; SEMICONDUCTOR MANUFACTURING; STRUCTURAL MODELING; TIGHT BINDING MODEL; VERY LARGE SCALE INTEGRATED;

CRYSTALLINE MATERIALS; DIELECTRIC MATERIALS; EQUATIONS OF STATE; GERMANIUM;

AMORPHOUS SILICON;

EID: 0007601326 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.581137 Document Type: Article

Times cited : (26)

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