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Volumn 17, Issue 2-4, 2000, Pages 544-550

Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth

Author keywords

Interface optimization; Physics of epitaxy

Indexed keywords


EID: 0007486439     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0927-0256(00)00085-9     Document Type: Article
Times cited : (6)

References (16)
  • 10
    • 0003813180 scopus 로고
    • Academic Press, New York
    • J.W. Matthews, Epitaxial Growth, Part B, Academic Press, New York, 1975, p. 505.
    • (1975) Epitaxial Growth , Issue.PART B , pp. 505
    • Matthews, J.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.